70 citations · 644 across the 34 of their papers we have counts for
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cond-mat.mes-hall2014★ 21 cited
Long-lived excitons in GaN/AlN nanowire heterostructures
M. Beeler, C. B. Lim, P. Hille +6
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertion…
cond-mat.mtrl-sci2014★ 51 cited
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics
S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero +7
We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For I…