activity
20162021
most citedBias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

45 citations · 128 across the 9 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall20203 cited

Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters

Maria Spies, Akhil Ajay, Eva Monroy +2

Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-op…

cond-mat.mes-hall201919 cited

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

Maria Spies, Jakub Polaczyński, Akhil Ajay +5

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are char…

cond-mat.mes-hall20194 cited

On intrinsic Stokes shift in wide GaN/AlGaN polar quantum wells

M. Jarema, M. Gladysiewicz, E. Zdanowicz +3

The interpretation of electromodulated reflectance (ER) spectra of polar quantum wells (QWs) is difficult even for homogeneous structures because of the built-in electric field. In…

cond-mat.mes-hall2018

Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars

Jonas Lähnemann, David A. Browne, Akhil Ajay +5

We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that displa…

cond-mat.mes-hall2016

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip +7

We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-ban…