activity
20142026
most citedEffect of the quantum well thickness on the performance of InGaN photovoltaic cells

70 citations · 644 across the 34 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

13 papers · 1 filter

cond-mat.mtrl-sci2023★ 16 cited

Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture

E. Akar, I. Dimkou, A. Ajay +2

The interest in nanowire photodetectors stems from their potential to improve the performance of a variety of devices, including solar cells, cameras, sensors, and communication sy…

cond-mat.mtrl-sci2021★ 4 cited

Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering

M. Sun, R. Blasco, M. de la Mata +5

Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To mod…

cond-mat.mtrl-sci2021

Optical net gain measurement on AlGaN/GaN multi-quantum well

Quang Minh Thai, Sergi Cuesta, Lou Denaix +5

We present net gain measurements at room temperature in AlGaN/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measur…

cond-mat.mtrl-sci2021

A Photonic Atom Probe Analysis of the Effect of Extended and Point Defects on the Luminescence of InGaN/GaN Quantum Dots

I. Dimkou, J. Houard, N. Rochat +6

We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 la…

cond-mat.mtrl-sci2021★ 6 cited

Polarization doping ab initio verification of the concept charge conservation and nonlocality

Ashfaq Ahmad, Pawel Strak, Pawel Kempisty +10

In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation la…

cond-mat.mtrl-sci2020★ 12 cited

Solubility limit of Ge Dopants in AlGaN: a Chemical and Microstructural Investigation down to the Nanoscale

C. Bougerol, E. Robin, E. Di Russo +5

Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural ana…