activity
20142026
most citedEffect of the quantum well thickness on the performance of InGaN photovoltaic cells

70 citations · 644 across the 34 of their papers we have counts for

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9 papers · 1 filter

physics.app-ph2026

Roadmap on UV-C photodetectors: materials, applications and industry perspectives

Fabien Massabuau, Drew Riley, Paul Meredith +44

UV-C photodetectors are poised to play an increasingly important role in future photonic technologies, driven by the rapid emergence of UV-C light sources and new wide bandgap semi…

physics.app-ph2023★ 8 cited

AlGaN/AlN Stranski-Krastanov quantum dots for highly efficient electron beam pumped emitters: The role of miniaturization and composition to attain far UV-C emission

Jesus Cañas, Anjali Harikumar, Stephen T. Purcell +6

Conventional ultraviolet (UV) lamps for disinfection emit radiation in the 255-270 nm range, which poses a high risk of causing cancer and cataracts. To address these concerns, sol…

physics.app-ph2022★ 24 cited

Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM

Bruno C. da Silva, Zahra S. Momtaz, Eva Monroy +4

A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron…

physics.app-ph2021

Decorrelation of internal quantum efficiency and lasing threshold in AlGaN-based separate confinement heterostructures for UV emission

Sergi Cuesta, Lou Denaix, Le Si Dang +1

In this paper, we study the internal quantum efficiency and lasing threshold of AlGaN/GaN separate confinement heterostructures designed for ultraviolet laser emission. We discuss…

physics.app-ph2020★ 10 cited

Correlated and in-situ electrical transmission electron microscopy studies and related membrane fabrication

Maria Spies, Zahra Sadre-Momtaz, Jonas Lähnemann +5

Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM…

physics.app-ph2019★ 18 cited

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

I. Dimkou, A. Harikumar, F. Donatini +9

In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowir…