Correlated and in-situ electrical transmission electron microscopy studies and related membrane fabrication

Abstract

Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM) based techniques with electrical and optical measurements on the very same specimen. Recent developments in TEM technologies allow not only the identification and in-situ electrical characterization of a particular object, but also the direct visualization of its modification in-situ by techniques such as Joule heating. Over the past years, we have carried out a number of studies in these fields that are reviewed in this contribution. In particular, we discuss here i) correlated studies where the same unique object is characterized electro-optically and by TEM, ii) in-situ Joule heating studies where a solid-state metal-semiconductor reaction is monitored in the TEM, and iii) in-situ biasing studies to better understand the electrical properties of contacted single nanowires. In addition, we provide detailed fabrication steps for the silicon nitride membranes crucial to these correlated and in-situ measurements.

arXiv commentThis is an author-created, un-copyedited version of a topical review published in Nanotechnology. IOP Publishing Ltd. is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6528/ab99f0

References in corpus (13)

• Review: Semiconductor Quantum Light Sources
• Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
• UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
• Electron Thermal Microscopy
• Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
• Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
• Near-infrared intersubband photodetection in GaN/AlN nanowires
• Nanowire photodetectors based on wurtzite semiconductor heterostructures
• Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires
• Joule-assisted silicidation for short-channel silicon nanowire devices
• Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors
• Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors
• Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters