59 citations · 231 across the 17 of their papers we have counts for
18 papers
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
Huaide Zhang, Jingxuan Kang, Aidan F. Campbell +3
(In,Ga)N layers are grown by plasma-assisted molecular beam epitaxy on GaN templates. We introduce a two-step protocol that involves switching the growth conditions from initially…
Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles
Jingxuan Kang, Rose-Mary Jose, Miriam Oliva +6
The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation…
Phase-selective growth of - vs -GaO and (InGa)O by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
A. Ardenghi, O. Bierwagen, J. Lähnemann +4
Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of GaO an interesting material for multiple applications, while In-incorporation int…
Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
M Gómez Ruiz, Aron Castro, Jesús Herranz +5
(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of…
Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
David van Treeck, Jonas Lähnemann, Guanhui Gao +3
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on G…
Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range
David van Treeck, Jonas Lähnemann, Oliver Brandt +1
Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nano…
Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing
Kingsley Egbo, Jonas Lähnemann, Andreas Falkenstein +2
(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging…
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Miriam Oliva, Timur Flissikowski, Michał Góra +7
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential f…
Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Kingsley Egbo, Esperanza Luna, Jonas Lähnemann +7
By employing a mixed SnO+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1…
Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to -Ga2O3
A. Ardenghi, O. Bierwagen, A. Falkenstein +4
The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) is addressed by using solid SiO as an alternative source mat…
Near-infrared emission from spatially indirect excitons in type II ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires
Piotr Wojnar, Jakub Plachta, Anna Reszka +9
ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalysts. A photolumine…
Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs
Len van Deurzen, Mikel Gómez Ruiz, Kevin Lee +8
This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN…
Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport
S. Fernández-Garrido, C. Pisador, J. Lähnemann +3
We analyse the morphological, structural and luminescence properties of self-assembled ZnO nanowires grown by chemical vapour transport on Si(001). The examination of nanowire ense…
Correlated and in-situ electrical transmission electron microscopy studies and related membrane fabrication
Maria Spies, Zahra Sadre-Momtaz, Jonas Lähnemann +5
Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM…
Near-infrared intersubband photodetection in GaN/AlN nanowires
Jonas Lähnemann, Akhil Ajay, Martien I. den Hertog +1
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in th…
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Jonas Lähnemann, Martien Den Hertog, Pascal Hille +6
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission…
Radial Stark effect in (In,Ga)N nanowires
Jonas Lähnemann, Pierre Corfdir, Felix Feix +5
We study the luminescence of unintentionally doped and Si-doped InGaN nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emis…
Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions
C. B. Lim, M. Beeler, A. Ajay +4
This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The…