59 citations · 600 across the 27 of their papers we have counts for
27 papers
Atomic scale imaging of the negative charge induced by a single vanadium dopant atom in monolayer WSe using 4D-STEM
D. Dosenovic, K. Sharma, S. Dechamps +10
There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic proper…
Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers
Djordje Dosenovic, Samuel Dechamps, Celine Vergnaud +10
Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical prope…
Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture
E. Akar, I. Dimkou, A. Ajay +2
The interest in nanowire photodetectors stems from their potential to improve the performance of a variety of devices, including solar cells, cameras, sensors, and communication sy…
Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM
Bruno C. da Silva, Zahra S. Momtaz, Eva Monroy +4
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron…
Quantitative analysis of the blue-green single-photon emission from a quantum dot in a thick tapered nanowire
Saransh Raj Gosain, Edith Bellet-Amalric, Eric Robin +5
Quantum dots acting as single photon emitters in the blue-green range are fabricated and characterized at cryogenic temperature. They consist in CdSe dots inserted in (Zn,Mg)Se nan…
Regulated dynamics with two-monolayer steps in vapor-solid-solid growth of nanowires
Edith Bellet-Amalric, Federico Panciera, Gilles Patriarche +5
The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape,…
Nano-sheets of two-dimensional polymers with dinuclear (arene)ruthenium nodes, synthesised at a liquid/liquid interface
Ana Cristina Gómez Herrero, Michel Féron, Nedjma Bendiab +6
We developed a new class of mono- or few-layered two-dimensional polymers based on dinuclear (arene)ruthenium nodes, obtained by combining the imine condensation with an interfacia…
Highly transparent contacts to the 1D hole gas in ultra-scaled Ge/Si core/shell nanowires
Masiar Sistani, Jovian Delaforce, Roman Kramer +10
Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful appl…
Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal-Semiconductor Nanojunctions
Masiar Sistani, Maximilian G. Bartmann, Nicholas A. Güsken +6
Recent advances in guiding and localizing light at the nanoscale exposed the enormous potential of ultra-scaled plasmonic devices. In this context, the decay of surface plasmons to…
Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters
Maria Spies, Akhil Ajay, Eva Monroy +2
Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-op…
Correlated and in-situ electrical transmission electron microscopy studies and related membrane fabrication
Maria Spies, Zahra Sadre-Momtaz, Jonas Lähnemann +5
Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM…
Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors
Maria Spies, Jakub Polaczyński, Akhil Ajay +5
Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are char…
Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
Maria Spies, Martien I. Den Hertog, Pascal Hille +6
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such…
Near-infrared intersubband photodetection in GaN/AlN nanowires
Jonas Lähnemann, Akhil Ajay, Martien I. den Hertog +1
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in th…
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures
A. Ajay, C. B. Lim, D. A. Browne +5
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength inf…
Dislocation-free axial InAs-on-GaAs nanowires on silicon
Daria V. Beznasyuk, Eric Robin, Martien Den Hertog +2
We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the…
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Jonas Lähnemann, Martien Den Hertog, Pascal Hille +6
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission…
Ge doping of GaN beyond the Mott transition
A. Ajay, J. Schörmann, M. Jimenez-Rodriguez +9
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K…
Determination of the optimal shell thickness for self-catalysed GaAs/AlGaAs core-shell nanowires
R. Songmuang, Le Thuy Thanh Giang, J. Bleuse M. Den Hertog +2
We present a set of experimental results identifying various effects that govern the carrier dynamics of self-catalyzed GaAs/AlGaAs core-shell nanowires (NWs) grown by molecular be…
Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission
C. Himwas, M. den Hertog, Le Si Dang +2
The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This i…
Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography
Martien Den Hertog, Rudeesun Songmuang, Eva Monroy
In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of na…
Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires
Gilles Nogues, Thomas Auzelle, Martien Den Hertog +2
We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning tran…
Optical properties of single ZnTe nanowires grown at low temperature
Alberto Artioli, Pamela Rueda-Fonseca, Petr Stepanov +11
Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and a…
Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
Moïra Hocevar, Le Thuy Thanh Giang, Rudeesun Songmuang +5
We observe a systematic red shift of the band-edge of passivated GaAs/Al0.35Ga0.65As core-shell nanowires with increasing shell thickness up to 100 nm. The shift is detected both i…