59 citations · 600 across the 27 of their papers we have counts for
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Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
Maria Spies, Martien I. Den Hertog, Pascal Hille +6
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such…
Near-infrared intersubband photodetection in GaN/AlN nanowires
Jonas Lähnemann, Akhil Ajay, Martien I. den Hertog +1
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in th…
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures
A. Ajay, C. B. Lim, D. A. Browne +5
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength inf…
Dislocation-free axial InAs-on-GaAs nanowires on silicon
Daria V. Beznasyuk, Eric Robin, Martien Den Hertog +2
We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the…