59 citations · 600 across the 27 of their papers we have counts for
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Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission
C. Himwas, M. den Hertog, Le Si Dang +2
The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This i…
Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography
Martien Den Hertog, Rudeesun Songmuang, Eva Monroy
In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of na…
Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires
Gilles Nogues, Thomas Auzelle, Martien Den Hertog +2
We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning tran…