Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

Abstract

We analyze the emission of single GaN nanowires with (In,Ga)N insertions using both micro-photoluminescence and cathodoluminescence spectroscopy. The emission spectra are dominated by a green luminescence band that is strongly blueshifted with increasing excitation density. In conjunction with finite-element simulations of the structure to obtain the piezoelectric polarization, these results demonstrate that our (In,Ga)N/GaN nanowire heterostructures are subject to the quantum-confined Stark effect. Additional sharp peaks in the spectra, which do not shift with excitation density, are attributed to emission from localized states created by compositional fluctuations in the ternary (In,Ga)N alloy.

6 pages, 8 figures; accepted for publication in Phys. Rev. B

References in corpus (1)

• Carrier recombination dynamics in InGaN/GaN multiple quantum wells

Cited by in corpus (11)

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• Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods
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• Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency
• Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy
• Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
• Correlated and in-situ electrical transmission electron microscopy studies and related membrane fabrication
• Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range