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Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale
Joel Martis, Sandhya Susarla, Archith Rayabharam +15
Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spat…
Strain-Enhanced Mobility of Monolayer MoS2
Isha M. Datye, Alwin Daus, Ryan W. Grady +3
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently…
Substrate-Dependence of Monolayer MoS Thermal Conductivity and Thermal Boundary Conductance
Alexander J. Gabourie, Cagil Koroglu, Eric Pop
The thermal properties of two-dimensional (2D) materials, like MoS, are known to be affected by interactions with their environment, but this has primarily been studied only wi…
How to Report and Benchmark Emerging Field-Effect Transistors
Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang +13
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device per…
Lateral Transport and Field-Effect Characteristics of Sputtered P-Type Chalcogenide Thin Films
Sumaiya Wahid, Alwin Daus, Asir Intisar Khan +4
Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory ap…
Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films
Heungdong Kwon, Asir Intisar Khan, Christopher Perez +3
Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge2Sb2Te5 (GST). However, a fundamental understanding of SL-PCM requi…