most citedImproved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a Thermal Barrier

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physics.app-ph2022★ 9 cited

Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a Thermal Barrier

Raisul Islam, Shengjun Qin, Sanchit Deshmukh +7

Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of…