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How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS Transistors?
Robert K. A. Bennett, Eric Pop
When transistor gate insulators have nanometer-scale equivalent oxide thickness (EOT), the gate capacitance () becomes smaller than the oxide capacitance ($C_\textrm{…
Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics
Hon-Loen Sinn, Aravindh Kumar, Eric Pop +1
Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS, are promising candidates for nanoscale photonics because of strong-light matter inter…
Engineering thermal transport across layered graphene-MoS2 superlattices
Aditya Sood, Charles Sievers, Yong Cheol Shin +7
Layering two-dimensional van der Waals materials provides unprecedented control over atomic placement, which could enable tailoring of vibrational spectra and heat flow at the sub-…
Vibrational Properties of a Naturally Occurring Semiconducting van der Waals heterostructure
V. Z. Costa, Liangbo Liang, Sam Vaziri +3
We present vibrational properties of Franckeite, which is a naturally occurring van der Waals heterostructure consisting of two different semiconducting layers. Franckeite is a com…
Improving Electric Contacts to Two-Dimensional Semiconductors
Saurabh V. Suryavanshi, Blanka Magyari-Kope, Paul Lim +4
Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semicon…
Scaling Theory of Two-Dimensional Field Effect Transistors
Saurabh V. Suryavanshi, Chris D. English, H. -S. P. Wong +1
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by th…