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A Two Qubit Logic Gate in Silicon
M. Veldhorst, C. H. Yang, J. C. C. Hwang +9
Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo…
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
J. T. Muhonen, A. Laucht, S. Simmons +9
Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic expe…
Coherent Control of a Single Silicon-29 Nuclear Spin Qubit
Jarryd J. Pla, Fahd A. Mohiyaddin, Kuan Y. Tan +6
Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the…
An addressable quantum dot qubit with fault-tolerant control fidelity
M. Veldhorst, J. C. C. Hwang, C. H. Yang +8
Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon,…
Charge State Hysteresis in Semiconductor Quantum Dots
C. H. Yang, A. Rossi, N. S. Lai +3
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge c…
Charge Offset Stability in Si Single Electron Devices with Al Gates
Neil M. Zimmerman, Chih-Hwan Yang, Nai Shyan Lai +2
We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 ) is inter…