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cond-mat.mes-hall2006
Gate-controlled charge transfer in Si:P double quantum dots
F. E. Hudson, A. J. Ferguson, C. C. Escott +4
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with sour…
cond-mat.mes-hall2006★ 20 cited
Ion implanted Si:P double-dot with gate tuneable interdot coupling
V. C. Chan, T. M. Buehler, A. J. Ferguson +6
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capac…