839 citations · 3.2k across the 60 of their papers we have counts for
31 papers · 1 filter
Evidence for mixed phases and percolation at the metal-insulator transition in two dimensions
Shiqi Li, Qing Zhang, Pouyan Ghaemi +1
The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmi…
Transport evidence for a sliding two-dimensional quantum electron solid
Pedro Brussarski, S. Li, S. V. Kravchenko +2
Ignited by the discovery of the metal-insulator transition, the behaviour of low-disorder two-dimensional (2D) electron systems is currently the focus of a great deal of attention.…
Resistivity of the insulating phase approaching the 2D metal-insulator transition: the effect of spin polarization
Shiqi Li, M. P. Sarachik
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magne…
Critical Behavior of a Strongly Interacting 2D Electron System
A. Mokashi, S. Li, Bo Wen +4
With decreasing density the thermopower of a low-disorder 2D electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude, tending t…
A metal-insulator transition in 2D: Established facts and open questions
S. V. Kravchenko, M. P. Sarachik
The discovery of a metallic state and a metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenges one of the most influential paradigms of modern mesosco…
Two-Parameter Scaling of Microwave Rectification vs Microwave Power at the Boundary between Two-Dimensional Electron Systems
N. Romero Kalmanovitz, I. Hoxha, Y. Jin +4
We report measurements of the rectification of microwave radiation (0.7-20 GHz) at the boundary between two-dimensional electron systems separated by a narrow gap on a silicon surf…
Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field
Yeekin Tsui, S. A. Vitkalov, M. P. Sarachik +1
A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the me…
Magnetoconductivity of Insulating Silicon Inversion Layers
Yeekin Tsui, S. A. Vitkalov, M. P. Sarachik +1
The normalized in-plane magnetoconductivity of the dilute strongly interacting system of electrons in silicon MOSFET's scales with for low densities in the insulating phase.…
Metal-insulator transition in two-dimensional electron systems
S. V. Kravchenko, M. P. Sarachik
The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in t…
Does diverge at a finite electron density in silicon inversion layers?
M. P. Sarachik, S. A. Vitkalov
For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density . Analysis of these m…
In-plane Magnetoconductivity of Si-MOSFET's: A Quantitative Comparison between Theory and Experiment
S. A. Vitkalov, K. James, B. N. Narozhny +2
For densities above cm in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experi…
Spin polarization of strongly interacting 2D electrons: the role of disorder
S. A. Vitkalov, M. P. Sarachik, T. M. Klapwijk
In high-mobility silicon MOSFET's, the inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that are in surp…
Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation
M. P. Sarachik
For five different electron and hole systems in two dimensions (Si MOSFET's, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, that marks the onset of strong localiza…
Spin Polarization of Two-Dimensional Electrons Determined from Shubnikov-de Haas Oscillations as a Function of Angle
S. A. Vitkalov, M. P. Sarachik, T. M. Klapwijk
Recent experiments in the two dimensional electron systems in silicon MOSFETs have shown that the in-plane magnetic field required to saturate the conductivity to its hig…
Scaling of the magnetoconductivity of silicon MOSFET's: evidence for a quantum phase transition in two dimensions
S. A. Vitkalov, Hairong Zheng, K. M. Mertes +2
For a broad range of electron densities and temperatures , the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto…
Hall Coefficient of a Dilute 2D Electron System in Parallel Magnetic Field
S. A. Vitkalov, H. Zheng, K. M. Mertes +2
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is indepen…
Metal-Insulator Transitions in Interacting Disordered Systems
Myriam P. Sarachik
A brief review of metal-insulator transitions in three-dimensional doped semiconductors, with emphasis on the "critical exponent puzzle"; and new experimental findings that signal…
Temperature-Dependence of the Resistivity of a Dilute 2D Electron System in High Parallel Magnetic Field
K. M. Mertes, Hairong Zheng, S. A. Vitkalov +2
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be full…
Metallic behavior and related phenomena in two dimensions
E. Abrahams, S. V. Kravchenko, M. P. Sarachik
For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field. In the last seve…
Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: the Effect of Strong In-Plane Magnetic Field
Sergey A. Vitkalov, Hairong Zheng, K. M. Mertes +2
Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas os…
Sharp Transition to a Spin-Ordered Phase in the 2D Electron System in Silicon MOSFET's
S. A. Vitkalov, H. Zheng, K. M. Mertes +2
This paper has been withdrawn by the authors. Measurements at many different angles spanning a broad range of electron densities indicate that the observed doubling of the period o…
Novel Phenomena in Dilute Electron Systems in Two Dimensions
M. P. Sarachik, S. V. Kravchenko
We review recent experiments that provide evidence for a transition to a conducting phase in two dimensions at very low electron densities. The nature of this phase is not understo…
Response to Parallel Magnetic Field of a Dilute 2D Electron System across the Metal-Insulator Transition
K. M. Mertes, D. Simonian, M. P. Sarachik +2
The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conduct…
Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))
S. V. Kravchenko, M. P. Sarachik, D. Simonian
In a recent Letter, Altshuler and Maslov propose a model which attributes the anomalous temperature and field dependence of the resistivity of two-dimensional electron (or hole) sy…