412 citations · 459 across the 9 of their papers we have counts for
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Two-Parameter Scaling of Microwave Rectification vs Microwave Power at the Boundary between Two-Dimensional Electron Systems
N. Romero Kalmanovitz, I. Hoxha, Y. Jin +4
We report measurements of the rectification of microwave radiation (0.7-20 GHz) at the boundary between two-dimensional electron systems separated by a narrow gap on a silicon surf…
Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field
Yeekin Tsui, S. A. Vitkalov, M. P. Sarachik +1
A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the me…
Magnetoconductivity of Insulating Silicon Inversion Layers
Yeekin Tsui, S. A. Vitkalov, M. P. Sarachik +1
The normalized in-plane magnetoconductivity of the dilute strongly interacting system of electrons in silicon MOSFET's scales with for low densities in the insulating phase.…
Metal-insulator transition in two-dimensional electron systems
S. V. Kravchenko, M. P. Sarachik
The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in t…
Does diverge at a finite electron density in silicon inversion layers?
M. P. Sarachik, S. A. Vitkalov
For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density . Analysis of these m…
Metallic behavior and related phenomena in two dimensions
E. Abrahams, S. V. Kravchenko, M. P. Sarachik
For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field. In the last seve…