Metal-Insulator Transitions in Interacting Disordered Systems
arXiv:cond-mat/0008453
Abstract
A brief review of metal-insulator transitions in three-dimensional doped semiconductors, with emphasis on the "critical exponent puzzle"; and new experimental findings that signal the possibility of an unexpected metal-insulator transition in dilute two-dimensional systems, such as silicon MOSFETs and GaAs/AlGaAs heterostructures.
arXiv commentTo be published in "More is Different: Fifty Years of Condensed Matter Physics," edited by Ravin. N. Bhatt and N. Phuan Ong (Princeton University Press)