Compositional tuning of ferromagnetism in Ga1-xMnxP
arXiv:cond-mat/0608133 · doi:10.1016/j.ssc.2006.09.010
Abstract
We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.
To be published in Solid State Communications
Cited by in corpus (5)
- Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism
- Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting
- Magnetocrystalline anisotropy and magnetization reversal in GaMnP synthesized by ion implantation and pulsed-laser melting
- Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen
- Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP