activity
20062023
most citedHigh-Transconductance Graphene Solution-Gated Field Effect Transistors

94 citations · 328 across the 11 of their papers we have counts for

collaborators

11 papers

physics.chem-ph2023

Solution-processed NiPS3 thin films from Liquid Exfoliated Inks with Long-Lived Spin-Entangled Excitons

Andrii Shcherbakov, Kevin Synnatschke, Stanislav Bodnar +10

Antiferromagnets are promising materials for future opto-spintronic applications since they show spin dynamics in the THz range and no net magnetization. Recently, layered van der…

physics.app-ph2022★ 12 cited

Using metal-organic frameworks to confine liquid samples for nanoscale NV-NMR

Kristina S. Liu, Xiaoxin Ma, Roberto Rizzato +5

Atomic-scale magnetic field sensors based on nitrogen vacancy (NV) defects in diamonds are an exciting platform for nanoscale nuclear magnetic resonance (NMR) spectroscopy. The det…

cond-mat.mtrl-sci2021

Spatially-Modulated Silicon Interface Energetics via Hydrogen Plasma-Assisted Atomic Layer Deposition of Ultrathin Alumina

Alex Henning, Johannes D. Bartl, Lukas Wolz +12

Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface…

physics.app-ph2021★ 8 cited

Scalable transparent conductive thin films with electronically passive interfaces for direct chemical vapor deposition of 2D materials

Theresa Grünleitner, Alex Henning, Michele Bissolo +5

We present a novel transparent conductive support structure for two-dimensional (2D) materials that provides an electronically passive 2D/3D interface while also enabling facile in…

physics.app-ph2021★ 76 cited

Surface NMR using quantum sensors in diamond

Kristina S. Liu, Alex Henning, Markus W. Heindl +5

Characterization of the molecular properties of surfaces under ambient or chemically reactive conditions is a fundamental scientific challenge. Moreover, many traditional analytica…

cond-mat.mtrl-sci2021

Aluminum Oxide at the Monolayer Limit via Oxidant-free Plasma-Assisted Atomic Layer Deposition on GaN

Alex Henning, Johannes D. Bartl, Andreas Zeidler +7

Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures an…