94 citations · 328 across the 11 of their papers we have counts for
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Spatially-Modulated Silicon Interface Energetics via Hydrogen Plasma-Assisted Atomic Layer Deposition of Ultrathin Alumina
Alex Henning, Johannes D. Bartl, Lukas Wolz +12
Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface…
Aluminum Oxide at the Monolayer Limit via Oxidant-free Plasma-Assisted Atomic Layer Deposition on GaN
Alex Henning, Johannes D. Bartl, Andreas Zeidler +7
Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures an…
Can surface-transfer doping and UV irradiation during annealing improve shallow implanted Nitrogen-Vacancy centers in diamond?
N. J. Glaser, G. Braunbeck, O. Bienek +2
It has been reported that conversion yield and coherence time of ion-implanted NV centers improve if the Fermi level is raised or lowered during the annealing step following implan…
High-Transconductance Graphene Solution-Gated Field Effect Transistors
Lucas H. Hess, Moritz V. Hauf, Max Seifert +5
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxiall…
Compositional tuning of ferromagnetism in Ga1-xMnxP
R. Farshchi, M. A. Scarpulla, P. R. Stone +7
We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xM…