High-Transconductance Graphene Solution-Gated Field Effect Transistors
arXiv:1105.6332 · doi:10.1063/1.3614445
Abstract
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance at the graphene/water interface. The performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies and found to be clearly superior, confirming the potential of graphene SGFETs for sensing applications in electrolytic environments.
The following article has been submitted to Applied Physics Letters. After it is published, it will be found at apl.aip.org
References in corpus (4)
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- Tuning the graphene work function by electric field effect
- Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
- First-principles studies of water adsorption on graphene: The role of the substrate