271 citations · 1k across the 14 of their papers we have counts for
14 papers
Ultrafast electronic line width broadening in the C 1s core level of graphene
Davide Curcio, Sahar Pakdel, Klara Volckaert +31
Core level binding energies and absorption edges are at the heart of many experimental techniques concerned with element-specific structure, electronic structure, chemical reactivi…
Silicon carbide stacking-order-induced doping variation in epitaxial graphene
Davood Momeni Pakdehi, Philip Schädlich, T. T. Nhung Nguyen +7
Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substra…
Substrate induced nanoscale resistance variation in epitaxial graphene
Anna Sinterhauf, Georg Alexander Traeger, Davood Momeni Pakdehi +8
Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies…
Strong plasmon reflection at nanometer-size gaps in monolayer graphene on SiC
Jianing Chen, Maxim L. Nesterov, Alexey Yu. Nikitin +12
We employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. The near-field image…
Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
Andrew L. Walter, Aaron Bostwick, Florian Speck +8
Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a uni…
Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide
Daniel Waldmann, Johannes Jobst, Felix Fromm +4
We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which g…