271 citations · 1k across the 14 of their papers we have counts for
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Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide
Daniel Waldmann, Johannes Jobst, Felix Fromm +4
We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which g…
Effective screening and the plasmaron bands in Graphene
Andrew L. Walter, Aaron Bostwick, Ki-Joon Jeon +10
Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on…
High-Transconductance Graphene Solution-Gated Field Effect Transistors
Lucas H. Hess, Moritz V. Hauf, Max Seifert +5
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxiall…
Highly p-doped graphene obtained by fluorine intercalation
Andrew L. Walter, Ki-Joon Jeon, Aaron Bostwick +8
We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent b…
The quasi-free-standing nature of graphene on H-saturated SiC(0001)
F. Speck, J. Jobst, F. Fromm +5
We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spec…