271 citations · 1k across the 14 of their papers we have counts for
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Silicon carbide stacking-order-induced doping variation in epitaxial graphene
Davood Momeni Pakdehi, Philip Schädlich, T. T. Nhung Nguyen +7
Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substra…
Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide
Daniel Waldmann, Johannes Jobst, Felix Fromm +4
We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which g…
High-Transconductance Graphene Solution-Gated Field Effect Transistors
Lucas H. Hess, Moritz V. Hauf, Max Seifert +5
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxiall…
Highly p-doped graphene obtained by fluorine intercalation
Andrew L. Walter, Ki-Joon Jeon, Aaron Bostwick +8
We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent b…
The quasi-free-standing nature of graphene on H-saturated SiC(0001)
F. Speck, J. Jobst, F. Fromm +5
We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spec…
Electronic structure of graphite/6H-SiC interfaces
Th. Seyller, K. V. Emtsev, F. Speck +2
We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1e…