94 citations · 99 across the 3 of their papers we have counts for
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cond-mat.mtrl-sci2011★ 94 cited
High-Transconductance Graphene Solution-Gated Field Effect Transistors
Lucas H. Hess, Moritz V. Hauf, Max Seifert +5
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxiall…
cond-mat.mtrl-sci2006★ 1 cited
Electronic structure of graphite/6H-SiC interfaces
Th. Seyller, K. V. Emtsev, F. Speck +2
We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1e…
cond-mat.mtrl-sci2006★ 4 cited
Initial stages of the graphite-SiC(0001) interface formation studied by photoelectron spectroscopy
K. V. Emtsev, Th. Seyller, F. Speck +4
Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization…