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Lucas H. Hess

1 paper here

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author position
  • first author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci1

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most citedHigh-Transconductance Graphene Solution-Gated Field Effect Transistors

94 citations · 94 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mtrl-sci2011★ 94 cited

High-Transconductance Graphene Solution-Gated Field Effect Transistors

Lucas H. Hess, Moritz V. Hauf, Max Seifert +5

In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxiall…

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