Polarization Relaxation Induced by Depolarization Field in Ultrathin Ferroelectric BaTiO Capacitors
arXiv:cond-mat/0506480 · doi:10.1103/PhysRevLett.95.237602
Abstract
Time-dependent polarization relaxation behaviors induced by a depolarization field were investigated on high-quality ultrathin SrRuO/BaTiO/SrRuO capacitors. The values were determined experimentally from an applied external field to stop the net polarization relaxation. These values agree with those from the electrostatic calculations, demonstrating that a large inside the ultrathin ferroelectric layer could cause severe polarization relaxation. For numerous ferroelectric devices of capacitor configuration, this effect will set a stricter size limit than the critical thickness issue.
References in corpus (4)
- Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films
- Ultrathin films of ferroelectric solid solutions under residual depolarizing field
- Optical investigation on the electronic structures of Y_{2}Ru_{2}O_{7}, CaRuO_{3}, SrRuO_{3}, and Bi_{2}Ru_{2}O_{7}
- Ferroelectricity in Pb(ZrTi)O thin films: critical thickness and 180 stripe domains
Cited by in corpus (45)
- Enhancement of ferroelectricity at metal/oxide interfaces
- Electroresistance effects in ferroelectric tunnel barriers
- Suppressed dependence of polarization on epitaxial strain in highly polar ferroelectrics
- High polarization, endurance and retention in sub-5 nm HfZrO films
- Tuning of the depolarization field and nanodomain structure in ferroelectric thin films
- Fast Molecular-Dynamics Simulation for Ferroelectric Thin-Film Capacitors Using a First-Principles Effective Hamiltonian
- Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors
- Multi-domain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors
- Understanding the origins of the intrinsic dead-layer effect in nanocapacitors
- Depolarizing field and "real" hysteresis loops in nanometer-scale ferroelectric films
- Polarization Switching Dynamics Governed by Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films
- Stabilization of competing ferroelectric phases of HfO under epitaxial strain
- Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films
- Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
- Coercive fields in ultrathin BaTiO3 capacitors
- Dielectric constants of Ir, Ru, Pt, and IrO2: Contributions from bound charges
- Depolarizing-Field Effect in Strained Nanoscale Ferroelectric Capacitors and Tunnel Junctions
- Thickness-dependent polarization of strained BiFeO3 films with constant tetragonality
- Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy
- First-principles modeling of ferroelectric capacitors via constrained-D calculations
- Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive lay
- Direct Observation of an Interface Dipole between Two Metallic Oxides Caused by Localized Oxygen Vacancies
- Effect of a built-in electric field in asymmetric ferroelectric tunnel junctions
- Determination of intrinsic ferroelectric polarization in lossy improper ferroelectric systems
- Full field electron spectromicroscopy applied to ferroelectric materials
- A model for retention on short, intermediate and long time-scale in ferroelectric thin films
- Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
- Phase-field modeling of chemical control of polarization stability and switching dynamics in ferroelectric thin film
- Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator
- 2D ferroelectric narrow-bandgap semiconductor Wurtzite' type alpha-In2Se3 and its silicon-compatible growth
- On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
- Influence of the magnetoelectric coupling on the electric field induced magnetization reversal in a composite non-strained multiferroic chain
- Orbital-selective Mass Enhancements in Multi-band CaSrRuO Systems Analyzed by the Extended Drude Model
- Photoinduced Domain Pattern Transformation in Ferroelectric/Dielectric Superlattices
- Strong influence of the complex bandstructure on the tunneling electroresistance: A combined model and ab-initio study
- Polarization and magnetization dynamics of a field-driven multiferroic structure
- Ferroelectricity in artificial bicolor oxide superlattices
- Effects of anisotropic elasticity in the problem of domain formation and stability of monodomain state in ferroelectric films
- On the persistence of polar domains in ultrathin ferroelectric capacitors
- Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions
- Pinned interface dipole-induced tunneling electroresistance in ferroelectric tunnel junctions
- Inorganic photovoltaic cells based on BiFeO3: spontaneous polarization, lattice matching, light polarization and their relationship to photovoltaic performance
- Tunable electron scattering mechanism in plasmonic SrMoO thin films
- Structural, dielectric, electrocaloric, and energy storage properties of lead free BaLa(ZrxTi)SnO (x = 0.05; 0.20) ceramics
- Kinetic control of ferroelectricity in ultrathin epitaxial Barium Titanate capacitors