most citedDomain Switching Kinetics in Disordered Ferroelectric Thin Films

348 citations

7 papers

cond-mat.stat-mech2008

Relaxation dynamics and interrupted coarsening in irrationally frustrated superconducting arrays

Gun Sang Jeon, Sung Jong Lee, Bongsoo Kim +1

Equilibrium and non-equilibrium relaxation behaviors of two-dimensional superconducting arrays are investigated via numerical simulations at low temperatures in the presence of inc…

cond-mat.stat-mech200811 cited

Nonequilibrium critical relaxations of the order parameter and energy in the two-dimensional ferromagnetic Potts model

Keekwon Nam, Bongsoo Kim, Sung Jong Lee

The static and dynamic critical properties of the ferromagnetic q-state Potts models on a square lattice with q = 2 and 3 are numerically studied via the nonequilibrium relaxation…

cond-mat.stat-mech200813 cited

Vortex jamming in superconductors and granular rheology

Hajime Yoshino, Tomoaki Nogawa, Bongsoo Kim

We demonstrate that a highly frustrated anisotropic Josephson junction array(JJA) on a square lattice exhibits a zero-temperature jamming transition, which shares much in common wi…

cond-mat.mtrl-sci200868 cited

Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy

S. M. Yang, J. Y. Jo, D. J. Kim +5

We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successiv…

cond-mat.mtrl-sci200724 cited

Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films

J. Y. Jo, S. M. Yang, H. S. Han +8

We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain al…

cond-mat.mtrl-sci2007348 cited

Domain Switching Kinetics in Disordered Ferroelectric Thin Films

J. Y. Jo, H. S. Han, J. -G. Yoon +3

We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O films, which are widely used in ferroelectric memory devices.…