348 citations
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Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy
S. M. Yang, J. Y. Jo, D. J. Kim +5
We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successiv…
Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films
J. Y. Jo, S. M. Yang, H. S. Han +8
We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain al…
Domain Switching Kinetics in Disordered Ferroelectric Thin Films
J. Y. Jo, H. S. Han, J. -G. Yoon +3
We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O films, which are widely used in ferroelectric memory devices.…
Coercive fields in ultrathin BaTiO3 capacitors
J. Y. Jo, Y. S. Kim, T. W. Noh +2
Thickness-dependence of coercive field (EC) was investigated in ultrathin BaTiO3 capacitors with thicknesses (d) between 30 and 5 nm. The EC appears nearly independent of d below 1…