117 citations · 286 across the 4 of their papers we have counts for
5 papers
Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy
S. M. Yang, J. Y. Jo, D. J. Kim +5
We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successiv…
Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films
J. Y. Jo, S. M. Yang, H. S. Han +8
We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain al…
Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors
D. J. Kim, J. Y. Jo, T. H. Kim +4
We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarizati…
Coercive fields in ultrathin BaTiO3 capacitors
J. Y. Jo, Y. S. Kim, T. W. Noh +2
Thickness-dependence of coercive field (EC) was investigated in ultrathin BaTiO3 capacitors with thicknesses (d) between 30 and 5 nm. The EC appears nearly independent of d below 1…
Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive lay
Y. S. Kim, J. Y. Jo, D. J. Kim +9
Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and el…