Unveiling the ac Dynamics of Ferroelectric Domains by Investigating the Frequency Dependence of Hysteresis Loops

Abstract

We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils two frequency-dependent scaling regions of hysteresis loops. Based on these findings, we constructed a dynamic phase diagram for hysteretic ferroelectric domain dynamics in the presence of ac fields.

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References in corpus (8)

• Physics of thin-film ferroelectric oxides
• Domain wall roughness in epitaxial ferroelectric PbZr0.2Ti0.8O3 thin films
• Nonlinear Dynamics of Domain Wall Propagation in Epitaxial Ferroelectric Thin Films
• Suppressed dependence of polarization on epitaxial strain in highly polar ferroelectrics
• Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors
• Polarization Switching Dynamics Governed by Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films
• Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy
• Models for the magnetic ac susceptibility of granular superferromagnetic CoFe/Al${}_2$O${}_3$

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• Nonsteady dynamic properties of a domain wall for the creep state under an alternating driving field
• Integration of imprint-free and low coercivity ferroelectric BaTiO3 thin films on silicon
• Mathematical modeling of hysteresis loops in ferroelectric materials