activity
20012011
most citedGiant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

494 citations · 2.1k across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2011★ 337 cited

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

Daesu Lee, S. H. Baek, T. H. Kim +4

We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, ne…

cond-mat.mtrl-sci2011★ 494 cited

Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

Daesu Lee, A. Yoon, S. Y. Jang +5

We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction,…

cond-mat.mtrl-sci2010★ 129 cited

Unveiling the ac Dynamics of Ferroelectric Domains by Investigating the Frequency Dependence of Hysteresis Loops

S. M. Yang, J. Y. Jo, T. H. Kim +7

We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperature…

cond-mat.mtrl-sci2009★ 199 cited

Nonlinear Dynamics of Domain Wall Propagation in Epitaxial Ferroelectric Thin Films

J. Y. Jo, S. M. Yang, T. H. Kim +6

We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under…

cond-mat.mtrl-sci2009★ 30 cited

Double polarization hysteresis loop induced by the domain pinning by defect dipoles in HoMnO3 epitaxial thin films

Daesu Lee, Heung-Sik Kim, Seung Yup Jang +5

We report on antiferroelectriclike double polarization hysteresis loops in multiferroic HoMnO3 thin films below the ferroelectric Curie temperature. This intriguing phenomenon is a…

cond-mat.mtrl-sci2008★ 244 cited

Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

S. H. Chang, J. S. Lee, S. C. Chae +5

We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond…