Spin noise spectroscopy in GaAs

Abstract

We observe the noise spectrum of electron spins in bulk GaAs by Faraday rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron spin dynamics in semiconductors. We measure exemplarily the electron spin relaxation time and the electron Lande g-factor in n-doped GaAs at low temperatures and find good agreement of the measured noise spectrum with an unpretentious theory based on Poisson distribution probability.

4 pages, 4 figures

References in corpus (5)

• Single-shot read-out of an individual electron spin in a quantum dot
• Low-temperature spin relaxation in n-type GaAs
• Spectroscopy of spontaneous spin noise as a probe of spin dynamics and magnetic resonance
• Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures
• Pumped spin-current and shot noise spectra in a single quantum dot

Cited by in corpus (105)

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• Interplay of Electron and Nuclear Spin Noise in GaAs
• Spin noise of electrons and holes in (In,Ga)As quantum dots: experiment and theory
• Anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells
• GHz Spin Noise Spectroscopy in n-Doped Bulk GaAs
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• Observation of Pure Spin Transport in a Diamond Spin Wire
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• Spatiotemporal spin fluctuations caused by spin-orbit-coupled Brownian motion
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• Higher order spin noise spectroscopy of atomic spins in fluctuating external fields
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• Optical amplification of spin noise spectroscopy via homodyne detection
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• Radiofrequency driving of coherent electron spin dynamics in $n$-GaAs detected by Faraday rotation
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