Interaction Correction to the Longitudinal Conductivity and Hall Resistivity in High Quality Two-Dimensional GaAs Electron and Hole Systems

Abstract

We present a systematic study of the corrections to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high quality GaAs systems using the recent theory of Zala et al. [Phys. Rev. B 64, 214204 (2001)]. We demonstrate that the interaction corrections to the longitudinal conductivity and Hall resistivity predicted by the theory are consistent with each other. This suggests that the anomalous metallic drop in resistivity at B=0 is due to interaction effects and supports the theory of Zala et al.

5 pages, 4 figures

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Cited by in corpus (8)

• Incipient Wigner Localization in Circular Quantum Dots
• Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas
• Interplay between phonon and impurity scattering in 2D hole transport
• The effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems
• Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface
• Degenerate versus semi-degenerate transport in a correlated 2D hole system
• Disorder and temperature renormalization of interaction contribution to the conductivity in two-dimensional In${}_x$Ga${}_{1-x}$As electron systems
• Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime