Exchange Biasing of the Ferromagnetic Semiconductor Ga1-xMnxAs
arXiv:cond-mat/0312259 · doi:10.1063/1.1787945
Abstract
We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T_B = 48 +- 2 K) and the Curie temperature of the ferromagnet (T_C = 55.1 +- 0.2 K) are comparable. The resulting exchange bias manifests itself as a clear shift in the magnetization hysteresis loop when the bilayer is cooled in the presence of an applied magnetic field and an enhancement of the coercive field.
pdf file only; submitted to Applied Physics Letters
References in corpus (5)
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- Electrical detection of spin accumulation in a p-type GaAs quantum well
- Saturated Ferromagnetism and Magnetization Deficit in Optimally Annealed (Ga,Mn)As Epilayers
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Cited by in corpus (12)
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- Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As
- Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions
- Control of Coercivities in (Ga,Mn)As Thin Films by Small Concentrations of MnAs Nanoclusters
- Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal
- Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers
- Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures
- Exchange Biasing of the Ferromagnetic Semiconductor (Ga,Mn)As by MnO
- Exchange bias in GeMn nanocolumns: the role of surface oxidation
- Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions
- Annealing-dependence of Exchange Bias in MnO/Ga1-xMnxAs Heterostructures