Lateral scaling in carbon nanotube field-effect transistors

Abstract

We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and drain. We ascribe this difference to a change from Schottky barrier modulation at the contacts to bulk switching. We also find that the current through the bulk portion is independent of gate length for any gate voltage, offering direct evidence for ballistic transport in semiconducting CNs over at least a few hundred nanometers, even for relatively small carrier velocities.

4 pages, 4 figures

References in corpus (1)

• Carbon Nanotubes as Schottky Barrier Transistors

Cited by in corpus (20)

• Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics
• High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities
• Unexpected Scaling of the Performance of Carbon Nanotube Transistors
• Electrostatic Engineering of Nanotube Transistors for Improved Performance
• A Three-dimensional simulation study of the performance of Carbon Nanotube Field Effect Transistors with doped reservoirs and realistic geometry
• Anomalous Conductance Quantization in Carbon Nanotubes
• Room-temperature electric field effect and carrier-type inversion in graphene films
• Scaling analysis of electron transport through metal-semiconducting carbon nanotube interfaces: Evolution from the molecular limit to the bulk limit
• Local gating of carbon nanotubes
• Entanglement between static and flying qubits in a semiconducting carbon nanotube
• Current rectification by asymmetric molecules: An ab initio study
• Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces
• Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain
• Nanotube-Metal Junctions: 2- and 3- Terminal Electrical Transport
• Transport in Nanotubes: Effect of Remote Impurity Scattering
• High frequency Scanning Gate Microscopy and local memory effect of carbon nanotube transistors
• Electron transport in semiconducting carbon nanotubes with hetero-metallic contacts
• Electron transport in armchair single-wall carbon nanotubes
• Zener quantum dot spin filter in a carbon nanotube
• Modulating transmission properties of nanoscale transistors by dipole effects near contacts