2 papers
cond-mat.mes-hall2003
Lateral scaling in carbon nanotube field-effect transistors
S. J. Wind, J. Appenzeller, Ph. Avouris
We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteri…
cond-mat1994
Conductance of an Artificial Atom in Strong Magnetic Fields
O. Klein, C. de C. Chamon, D. Tang +4
The conductance resulting from resonant tunneling through a droplet of electrons is used to measure its chemical potential . Abrupt shifts of occur at sharpl…