Unexpected Scaling of the Performance of Carbon Nanotube Transistors

Abstract

We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide. Experimental measurements and theoretical calculations provide a consistent understanding of the scaling, which reflects the very different device physics of a Schottky barrier transistor with a quasi-one-dimensional channel contacting a sharp edge. A simple analytic model gives explicit scaling expressions for key device parameters such as subthreshold slope, turn-on voltage, and transconductance.

4 pages, 4 figures

References in corpus (5)

• Carbon Nanotubes as Schottky Barrier Transistors
• Drain Voltage Scaling in Carbon Nanotube Transistors
• Lateral scaling in carbon nanotube field-effect transistors
• Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode
• Electrostatic Engineering of Nanotube Transistors for Improved Performance

Cited by in corpus (16)

• High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities
• A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors
• Exciton-phonon effects in carbon nanotube optical absorption
• Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study
• High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates
• A simple drain current model for Schottky-barrier carbon nanotube field effect transistors
• Device modeling of long-channel nanotube electro-optical emitter
• Complementary-like Graphene Logic Gates Controlled by Electrostatic Doping
• Properties of short channel ballistic carbon nanotube transistors with ohmic contacts
• Schottky-to-Ohmic Crossover in Carbon Nanotube Transistor Contacts
• Analytical Model of One-Dimensional Ballistic Schottky-Barrier Transistors
• Ultrastrong coupling between electron tunneling and mechanical motion
• Trion-based High-speed Electroluminescence from Semiconducting Carbon Nanotube Films
• Statistical Analysis of Contacts to Synthetic Monolayer MoS2
• Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors
• Efficient narrow-band light emission from a single carbon nanotube p-n diode