Qubit-compatible substrates with superconducting through-silicon vias

Abstract

We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.

Accepted version. 11 pages, 7 figures, 2 tables with appendices included

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Cited by in corpus (8)

• Noisy intermediate-scale quantum computers
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• Wafer-scale uniformity of Dolan-bridge and bridgeless Manhattan-style Josephson junctions for superconducting quantum processors
• Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers
• Microwave characterization of tantalum superconducting resonators on silicon substrate with niobium buffer layer
• Low-Loss Superconducting Resonators Fabricated from Tantalum Films Grown at Room Temperature
• Analog information decoding of bosonic quantum LDPC codes
• Investigation of tantalum films growth for coplanar resonators with internal quality factors above ten million