4.4 kV $β$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$

Arkka Bhattacharyya; Shivam Sharma; Fikadu Alema; Praneeth Ranga; Saurav Roy; Carl Peterson; George Seryogin; Andrei Osinsky; Uttam Singisetti; Sriram Krishnamoorthy

doi:10.35848/1882-0786/ac6729

paper

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

arXiv:2201.10028 · doi:10.35848/1882-0786/ac6729

Abstract

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_{x}$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L $_{G D}$ = 34.5 $μ$ m exhibits an ON current (I $_{D M A X}$ ) of 56 mA/mm, a high I $_{O N}$ /I $_{O F F}$ ratio $>$ 10 $^{8}$ and a very low reverse leakage until catastrophic breakdown at $\sim$ 4.4kV. The highest measurable V $_{B R}$ recorded was 4.57 kV (L $_{G D}$ = 44.5 $μ$ m). An LFOM of 132 MW/cm $^{2}$ was calculated for a V $_{B R}$ of $\sim$ 4.4 kV. The reported results are the first $>$ 4kV-class Ga $_{2}$ O $_{3}$ transistors to surpass the theoretical FOM of Silicon. These are also the highest I $_{D M A X}$ and lowest R $_{O N}$ values achieved simultaneously for any $β$ -Ga $_{2}$ O $_{3}$ device with V $_{B R}$ $>$ 4kV to date. This work highlights that high breakdown voltages (V $_{B R}$ ), high lateral figure of merit (LFOM) and high ON currents can be achieved simultaneously in $β$ -Ga $_{2}$ O $_{3}$ lateral transistors.

4 pages, 5 figures

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Abstract

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4.4 kV β-Ga2​O3​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2

Abstract

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Cited by in corpus (2)

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$