Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Abstract

Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal-insulator-graphene (MIG) diodes over conventional metal-insulator-metal diodes are discussed with respect to relevant figures-of-merit. The MIG concept is extended to 1D diodes. Several experimentally implemented radio frequency circuit applications with MIG diodes as active elements are presented. Furthermore, graphene-silicon Schottky diodes as well as MIG diodes are reviewed in terms of their potential for photodetection. Here, graphene-based diodes have the potential to outperform conventional photodetectors in several key figures-of-merit, such as overall responsivity or dark current levels. Obviously, advantages in some areas may come at the cost of disadvantages in others, so that 2D/3D diodes need to be tailored in application-specific ways.

References in corpus (12)

• Electric Field Effect in Atomically Thin Carbon Films
• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Quantum interference and Klein tunneling in graphene heterojunctions
• A Graphene Field-Effect Device
• Integrating Graphene into Semiconductor Fabrication Lines
• Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
• Graphene photodetector integrated on a photonic crystal defect waveguide
• Heterojunction Hybrid Devices from Vapor Phase Grown MoS${}_2$
• Graphene Enabled Optoelectronics on Paper
• Few-Layer MoS${}_2$/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection