Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot
arXiv:2102.03707 · doi:10.1021/acs.nanolett.1c00263
Abstract
Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes and manipulating spin-orbit qubits. Here, from the strongly anisotropic leakage current in the spin blockade regime for a double dot, we extract the full g-tensor and find that the spin-orbit field is in plane with an azimuthal angle of 59° to the axis of the nanowire. The direction of the spin-orbit field indicates a strong spin-orbit interaction along the nanowire, which may have originated from the interface inversion asymmetry in Ge hut wires. We also demonstrate two different spin relaxation mechanisms for the holes in the Ge hut wire double dot: spin-flip cotunneling to the leads, and spin-orbit interaction within the double dot. These results help establish feasibility of a Ge-based quantum processor.
23 pages, 5 figures
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- All-electrical control of hole singlet-triplet spin qubits at low leakage points
- Effect of induced transition on the quantum entanglement and coherence in two-coupled double quantum dots system
- Electrical operation of hole spin qubits in planar MOS silicon quantum dots
- Low-energy subband wave-functions and effective -factor of one-dimensional hole gas
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- Direct measurement of spin-flip rates in single-electron tunneling
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