Dispersively probed microwave spectroscopy of a silicon hole double quantum dot

Abstract

Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first GHz-frequency tone drives electric-dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g-factors and tunnel/spin-orbit couplings for both even and odd occupation.

References in corpus (10)

• An addressable quantum dot qubit with fault-tolerant control fidelity
• A high-sensitivity gate-based charge sensor in silicon
• Rapid high-fidelity gate-based spin read-out in silicon
• Single-qubit lasing and cooling at the Rabi frequency
• Mesoscopic admittance of a double quantum dot
• A Radio Frequency Charge Parity Meter
• Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
• Dissipation in circuit quantum electrodynamics: lasing and cooling of a low-frequency oscillator
• Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor
• From adiabatic to dispersive readout of quantum circuits

Cited by in corpus (14)

• Review of performance metrics of spin qubits in gated semiconducting nanostructures
• Recent advances in hole-spin qubits
• Strong coupling between a microwave photon and a singlet-triplet qubit
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Two-body Wigner molecularization in asymmetric quantum dot spin qubits
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Coupling of hole double quantum dot in planar germanium to a microwave cavity
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• Gate reflectometry in dense quantum dot arrays
• Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
• Dynamical charge susceptibility in nonequilibrium double quantum dots
• Parametric longitudinal coupling of a semiconductor charge qubit and a RF resonator
• Flux-Tunable Hybridization in a Double Quantum Dot Interferometer
• Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases