Band structure of a HgTe-based three-dimensional topological insulator

Abstract

From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the $\mathbf{k}\cdot \mathbf{p}$ model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.

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Cited by in corpus (6)

• Energy spectrum of semimetallic HgTe quantum wells
• Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film
• Transport properties of a 1000-nm HgTe film: the interplay of surface and bulk carriers
• Universal transparency and fine band structure near the Dirac point in HgTe quantum wells
• Anomalous conductance steps in three-dimensional topological insulator HgTe-based quantum point contacts
• Self-Consistent Model for Gate Control of Narrow-, Broken-, and Inverted-Gap (Topological) Heterostructures