Structure-driven intercalated architecture of septuple-atomic-layer family with diverse properties from semiconductor to topological insulator to Ising superconductor
arXiv:2008.02981 · doi:10.1038/s41467-021-22324-8
Abstract
Motivated by the fact that septuple-atomic-layer MnBiTe can be structurally viewed as the combination of double-atomic-layer MnTe intercalating into quintuple-atomic-layer BiTe, we present a general approach of constructing twelve septuple-atomic-layer - and - monolayer family (\emph{i} = 1 to 6) by intercalating MoS-type monolayer into InSe-type AZ monolayer. Besides reproducing the experimentally synthesized -MoSiN, -WSiN and -MnBiTe monolayer materials, another 66 thermodynamically and dynamically stable were predicted, which span a wide range of properties upon the number of valence electrons (VEC). with the rules of 32 or 34 VEC are mostly semiconductors with direct or indirect band gap and, however, with 33 VEC are generally metal, half-metal ferromagnetism, or spin-gapless semiconductor upon whether or not an unpaired electron is spin polarized. Moreover, we propose -WSiP for the spin-valley polarization, -TaSiN for Ising superconductor and -SrGaSe for topological insulator.
Maintext 9 pages; 5 figures; Supplementary Materials 8 figures and 4 tables
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