Stable Ferromagnetism and High Curie Temperature in VGeN
arXiv:2202.06424 · doi:10.1088/1367-2630/ac8239
Abstract
The discovery of monolayer MAZ (M = transition metals; A = IVA elements; Z = VA elements, Science 369, 2020, 670-674) family has led another advance for facilitating and harnessing magnetism in low-dimensional materials. However, only Cr and V based MAN compounds exhibit intrinsic magnetism yet with unsatisfied magnetic ordering temperature. Herein, we identify a stable ferromagnetic number of this family, i.e., VGeZ monolayer, by means of first-principles calculations. It is found that the magnetic configuration sustains under both compression and tensile uniaxial in-plane strain, and the former can act as a positive modulator to enhance magnetic ordering temperature (Tc). Electronic structure calculations reveal a large band gap in the spin down channel while band-gapless in the spin up channel, an impressive near-half-metallic character, which is a favorable candidate for spintronic device.
arXiv comment11 pages, 5 figures,Supporting Material
References in corpus (13)
- Two Dimensional Atomic Crystals
- Universal dynamical conductance in graphite
- Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
- Spin-half paramagnetism in graphene induced by point defects
- Structure-driven intercalated architecture of septuple-atomic-layer family with diverse properties from semiconductor to topological insulator to Ising superconductor
- Predicted septuple-atomic-layer Janus (M=Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities
- Strain-induced semiconductor to metal transition in MA2Z4 bilayers
- Semiconductor-to-metal transition in bilayer MoSiN and WSiN with strain and electric field
- Ferromagnetism in graphene nanoribbons: split versus oxidative unzipped ribbons
- Magnetic Properties of NbSi2N4, VSi2N4, and VSi2P4 Monolayers
- Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer
- Interfacial Dzyaloshinskii-Moriya Interaction of Antiferromagnetic Materials
- Effect of O-doping or N-vacancy on the structural, electronic and magnetic properties of MoSi2N4 monolayer