Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A

Abstract

We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 °C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizeable reduction of the island density. An additional, reentrant increasing behavior is observed below 80 °C. We attribute the above complex behavior to the liquid-solid phase transition and to the complex island-island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 °C have a face-centered cubic crystal structure.

12 pages, 5 figures

References in corpus (3)

• Droplet Epitaxy of Semiconductor Nanostructures for Quantum Photonic Devices
• Capture-zone scaling in island nucleation: phenomenological theory of an example of universal fluctuation behavior
• Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 $\mu$m

Cited by in corpus (1)

• Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates