6 citations · 6 across the 1 of their papers we have counts for
4 papers
Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A
Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti +4
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increa…
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires
Simone Assali, Roberto Bergamaschini, Emilio Scalise +8
The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the e…
Strain engineering in Ge/GeSn core/shell nanowires
Simone Assali, Marco Albani, Roberto Bergamaschini +6
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain…
Optically reconfigurable polarized emission in Germanium
Sebastiano De Cesari, Roberto Bergamaschini, Elisa Vitiello +2
Light polarization can conveniently encode information. Yet, the ability to steer polarized optical fields is notably demanding but crucial to develop practical methods for data en…