activity
20082023
most citedImpact-driven effects in thin-film growth: steering and transient mobility at the Ag(110) surface

7 citations · 26 across the 5 of their papers we have counts for

collaborators

8 papers

cond-mat.stat-mech2023★ 7 cited

Accurate generation of stochastic dynamics based on multi-model Generative Adversarial Networks

Daniele Lanzoni, Olivier Pierre-Louis, Francesco Montalenti

Generative Adversarial Networks (GANs) have shown immense potential in fields such as text and image generation. Only very recently attempts to exploit GANs to statistical-mechanic…

physics.comp-ph2022★ 6 cited

Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: extrapolation and prediction uncertainty

Daniele Lanzoni, Marco Albani, Roberto Bergamaschini +1

We use a Convolutional Recurrent Neural Network approach to learn morphological evolution driven by surface diffusion. To this aim we first produce a training set using phase field…

cond-mat.mtrl-sci2020

Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires

E. Scalise, A. Sarikov, L. Barbisan +4

The metastable hexagonal-diamond phase of Si and Ge (and of SiGe alloys) displays superior optical properties with respect to the cubic-diamond one. The latter is the most stable a…

cond-mat.mtrl-sci2020★ 6 cited

Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A

Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti +4

We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increa…

cond-mat.mtrl-sci2020

Origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

Emilio Scalise, Luca Barbisan, Andrey Sarikov +3

3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular, single, double and triple stacking faults (SFs) are observed in several experiments to co…

cond-mat.mtrl-sci2019

Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

Simone Assali, Roberto Bergamaschini, Emilio Scalise +8

The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the e…