Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2
arXiv:2006.06660 · doi:10.1007/s12274-020-2918-2
Abstract
Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes.
arXiv comment4 main text figures, 5 tables, 18 figures in the supporting information
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Cited by in corpus (10)
- Strongly anisotropic strain-tunability of excitons in exfoliated ZrSe
- Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors
- An automated system for strain engineering and straintronics of 2D materials
- Interaction-driven transport of dark excitons in 2D semiconductors with phonon-mediated optical readout
- Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
- Visualization of dark excitons in semiconductor monolayers for high-sensitivity strain sensing
- Engineering robust strain transmission in van der Waals heterostructure devices
- Excitons under strain: light absorption and emission in strained hexagonal boron nitride
- Enhanced Strain Transfer and Optoelectronic Performance in MoS2 Devices via Formvar Encapsulation
- Measurements of absolute bandgap deformation-potentials of optically-bright bilayer WSe