Optical and electronic properties of low-density InAs/InP quantum dot-like structures devoted to single-photon emitters at telecom wavelengths

Abstract

Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks. However, obtaining the necessary low in-plane density of emitters remains a challenge. Such structures are also still less explored than their InAs/GaAs counterparts regarding optical properties of confined carriers. Here, we report on the growth via metal-organic vapor phase epitaxy and investigation of low-density InAs/InP QD-like structures, emitting in the range of 1.2-1.7 $\mu$m, which includes the S, C, and L bands of the third optical window. We observe multiple photoluminescence (PL) peaks originating from flat QDs with height of small integer numbers of material monolayers. Temperature-dependent PL reveals redistribution of carriers between families of QDs. Via time-resolved PL, we obtain radiative lifetimes nearly independent of emission energy in contrast to previous reports on InAs/InP QDs, which we attribute to strongly height-dependent electron-hole correlations. Additionally, we observe neutral and charged exciton emission from spatially isolated emitters. Using the 8-band k$\cdot$p model and configuration-interaction method, we successfully reproduce energies of emission lines, the dispersion of exciton lifetimes, carrier activation energies, as well as the biexciton binding energy, which allows for a detailed and comprehensive analysis of the underlying physics.

arXiv comment13 pages, 9 figures

References in corpus (11)

• Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots
• Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots
• 99% beta factor and directional coupling of quantum dots to fast light in photonic crystal waveguides determined by hyperspectral imaging
• Origin of non-linear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory
• Carrier thermal escape in families of InAs/InP self-assembled quantum dots
• Carrier trapping and luminescence polarization in quantum dashes
• Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures
• Spin-orbit coupling and magnetic field dependence of carriers states in a self-assembled quantum dot
• Electron states in a double quantum dot with broken axial symmetry
• Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots
• Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band

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• Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
• Spin-photon Qubits for Scalable Quantum Network